Standard-cell layout structure with horn power and smart metal cut

ABSTRACT

In some embodiments, the present disclosure relates to an integrated circuit (IC) having parallel conductive paths between a BEOL interconnect layer and a middle-end-of-the-line (MEOL) structure, which are configured to reduce a parasitic resistance and/or capacitance of the IC. The IC comprises source/drain regions arranged within a substrate and separated by a channel region. A gate structure is arranged over the channel region and a MEOL structure is arranged over one of the source/drain regions. A conductive structure is arranged over and in electrical contact with the MEOL structure. A first conductive contact is arranged between the MEOL structure and an overlying BEOL interconnect wire (e.g., a power rail). A second conductive contact is configured to electrically couple the BEOL interconnect wire and the MEOL structure along a conductive path extending through the conductive structure, thereby forming parallel conductive paths between the BEOL interconnect layer and the MEOL structure.

REFERENCE TO RELATED APPLICATION

This Application claims priority to U.S. Provisional Application No.62/260,965 filed on Nov. 30, 2015.

BACKGROUND

Over the last four decades the semiconductor fabrication industry hasbeen driven by a continual demand for greater performance (e.g.,increased processing speed, memory capacity, etc.), a shrinking formfactor, extended battery life, and lower cost. In response to thisdemand, the industry has continually reduced a size of semiconductordevice components, such that modern day integrated chips may comprisemillions or billions of semiconductor devices arranged on a singlesemiconductor die.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 illustrates a top-view of some embodiments of an integratedcircuit having a power horn structure configured to reduce parasiticresistance.

FIGS. 2A-2B illustrate cross-sectional views of some embodiments of anintegrated circuit having a power horn structure configured to reduceparasitic resistance.

FIGS. 3-7B illustrate some additional embodiments of integrated circuitshaving a power horn structure.

FIGS. 8A-8C illustrates some embodiments of a NOR gate having a powerhorn structure configured to reduce parasitic resistance.

FIG. 9 illustrates a top-view of some embodiments of an integratedcircuit having a power horn structure and output pins configured toreduce parasitic resistance and capacitance.

FIGS. 10-17 illustrate some embodiments of a method of forming anintegrated circuit having a power horn structure.

FIG. 18 illustrates a flow diagram of some embodiments of a method offorming an integrated circuit having a power horn structure configuredto reduce parasitic resistance.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

In emerging technology nodes, the small size of transistor componentsmay cause restrictive topology choices for routing back-end-of-the-line(BEOL) metal interconnect layers. To alleviate metal interconnectrouting problems, middle-end-of-the-line (MEOL) local interconnectlayers may be used. MEOL local interconnect layers are conductive (e.g.,metal) layers that are vertically positioned between thefront-end-of-line (FEOL) and the BEOL. MEOL local interconnect layerscan provide very high-density local routing that avoids consumption ofscarce routing resources on the lower BEOL metal interconnect layers.

Typically, MEOL local interconnect layers comprise MEOL structures thatare formed directly onto an active area (e.g., a source/drain region).Conductive contacts are subsequently formed onto some of the MEOLstructures to form an electrical connection with an overlying BEOL metalinterconnect layers. It has been appreciated that in emerging technologynodes (e.g., 14 nm, 10 nm, 7 nm, etc.) the small size of MEOL structuresand/or the conductive contacts is becoming small enough to be asignificant source of parasitic resistance. The parasitic resistance cancause a drop in voltage and/or current (e.g., between a source voltageV_(DD) or ground voltage V_(SS) and a transistor source/drain region)that degrades transistor device performance.

In some embodiments, the present disclosure relates to an integratedcircuit having parallel conductive paths between a BEOL interconnectlayer and a MEOL structure, which are configured to reduce a parasiticresistance and/or capacitance of the integrated circuit. The integratedcircuit comprises source/drain regions arranged within a semiconductorsubstrate and separated by a channel region. A first gate structure isarranged over the channel region, and a middle-end-of-the-line (MEOL)structure is arranged over one of the source/drain regions. A conductivestructure is arranged over and in electrical contact with the MEOLstructure. A first conductive contact is arranged between the MEOLstructure and an overlying BEOL interconnect wire (e.g., a power rail).A second conductive contact is configured to electrically couple theBEOL interconnect wire and the MEOL structure along a conductive pathextending through the conductive structure, so as to form parallelconductive paths extending between the BEOL interconnect layer and theMEOL structure. The parallel conductive paths have an increasedcross-sectional area (compared to a single conductive path) for currentto pass from the BEOL interconnect layer to the MEOL structure (i.e., asemiconductor device), thereby reducing a parasitic resistance of thedevice.

FIG. 1 illustrates a top-view of some embodiments of an integratedcircuit 100 having a power horn structure configured to reduce parasiticresistance.

The integrated circuit 100 comprises a plurality of gate structures 106a-106 b arranged over an active area 104 within a semiconductorsubstrate 102. In some embodiments, the plurality of gate structurescomprise an electrically active gate structure 106 a and a dummy gatestructure 106 b (i.e., an electrically inactive gate structure). Theelectrically active gate structure 106 a is coupled to an overlyingfirst BEOL metal interconnect wire 114 a comprising a control node CTRL(e.g., a control voltage) by way of a first conductive contact 112 a.The electrically active gate structure 106 a is configured to control aflow of charge carriers within a transistor device 116 comprising theactive area 104. In some embodiments, the plurality of gate structures106 a-106 b extend along the first direction 120, and the active area104 extends along a second direction 122 that is perpendicular to thefirst direction 120. In some embodiments, the active area 104 includesat least one fin, together with the plurality of gate structures 106a-106 b, to form FinFET transistors.

A plurality of middle-end-of-the-line (MEOL) structures 108 a-108 c areinterleaved between the plurality of gate structures 106 a-106 b. Theplurality of MEOL structures comprise a first MEOL structure 108 a and asecond MEOL structure 108 b configured to provide electrical connectionsto the active area 104. In some embodiments, the first MEOL structure108 a is coupled to an overlying second BEOL metal interconnect wire 114b comprising a first input/output node I/O₁ by way of a secondconductive contact 112 b. The second MEOL structure 108 b is coupled toan overlying third BEOL metal interconnect wire 114 c comprising asecond input/output node I/O₂ by way of a third conductive contact 112c. The third conductive contact 112 c forms a first conductive path 118a (i.e., electrical connection) between the third BEOL metalinterconnect wire 114 c and the second MEOL structure 108 b.

A conductive structure 110 is arranged over the second MEOL structure108 b. A fourth conductive contact 112 d forms a second conductive path118 b between the third BEOL metal interconnect wire 114 c and thesecond MEOL structure 108 b by way of the conductive structure 110. Insome embodiments, the plurality of MEOL structures comprise a third MEOLstructure 108 c separated from the second MEOL structure 108 b by thedummy gate structure 106 b. In some such embodiments, the third andfourth conductive contacts, 112 c and 112 d, are connected directly fromthe third BEOL metal interconnect wire 114 c to the second MEOLstructure 108 b and the third MEOL structure 108 c, respectively. Inother such embodiments, the third and fourth conductive contacts, 112 cand 112 d, are connected directly to the conductive structure 110. Insome embodiments, the conductive structure 110 extends over the dummygate structure 106 b.

Therefore, the conductive structure 110 provides for first and secondconductive paths, 118 a and 118 b, which extend in parallel between thethird BEOL metal interconnect wire 114 c and the second MEOL structure108 b. The parallel conductive paths, 118 a and 118 b, provide for anincreased cross-sectional area (compared to a single conductive path)for current to pass from the third BEOL metal interconnect wire 114 c tothe transistor device 116, thereby reducing a parasitic resistance ofthe transistor device 116.

FIG. 2A illustrates a cross-sectional view (shown along cross-sectionalline A-A′ of FIG. 1)) of some embodiments of an integrated circuit 200having a power horn structure configured to reduce parasitic resistance.

The integrated circuit 200 comprises an active area 104 having aplurality of source/drain regions 204 a-204 c arranged within asemiconductor substrate 102. In some embodiments, the active area 104may be included within a well region 202 having a doping type oppositethe semiconductor substrate 102 and the source/drain regions 204 a-204 c(e.g., a PMOS active area formed within a p-type substrate may comprisep-type source/drain regions arranged within an n-well). The plurality ofsource/drain regions 204 a-204 c comprise highly doped regions (e.g.,having a doping concentration greater than that of the surroundingsemiconductor substrate 102). In some embodiments, the plurality ofsource/drain regions 204 a-204 c are epitaxial source/drain regions. Insome embodiments, the active area 104 includes at least one fin,protruding outward from the semiconductor substrate 102, to form FinFETtransistors.

A plurality of gate structures 106 a-106 b are arranged over thesemiconductor substrate 102 at locations laterally between the pluralityof source/drain regions 204 a-204 c. The plurality of gate structures106 a-106 b comprise an active gate structure 106 a and a dummy gatestructure 106 b. The active gate structure 106 a is configured tocontrol the flow of charge carriers within a channel region 206 arrangedbetween the first source/drain region 204 a and a second source/drainregion 204 b during operation of a transistor device 116, while thedummy gate structure 106 b is not. In some embodiments, the plurality ofgate structures 106 a-106 b may comprise a gate dielectric layer 208 andan overlying gate electrode layer 210. In various embodiments, the gatedielectric layer 208 may comprise an oxide or a high-k dielectric layer.In various embodiments, the gate electrode layer 210 may comprisepolysilicon or a metal (e.g., aluminum).

A plurality of MEOL structures 108 a-108 c are laterally interleavedbetween the plurality of gate structures 106 a-106 b. The plurality ofMEOL structures 108 a-108 c are arranged over the source/drain regions204 a-204 c and, in some embodiments, have heights that aresubstantially equal to heights of the plurality of gate structures 106a-106 b (i.e., upper surfaces of the plurality of MEOL structures 108a-108 c are substantially co-planar with upper surfaces of the gateelectrode layer 210). In some embodiments, the heights of the MEOLstructures 108 a-108 c are larger than heights of the plurality of gatestructures 106 a-106 b. The plurality of MEOL structures 108 a-108 c maycomprise a conductive material such as aluminum, copper, and/ortungsten, for example. In some embodiments, the plurality of MEOLstructures 108 a-108 c and the plurality of gate structures 106 a-106 bare arranged at a substantially regular pitch (i.e., a spacing issubstantially the same between left edges of the gate structures orbetween right edges of the gate structure). For example, the regularpitch may have values that vary due to misalignment errors byapproximately 5% (e.g., a first pitch may be between 0.95 and 1.05 timesa second pitch).

A conductive structure 110 is arranged over a second MEOL structure 108b of the plurality of MEOL structures 108 a-108 b. The conductivestructure 110 has a lower surface that contacts an upper surface of thesecond MEOL structure 108 b. In some embodiments, the lower surface ofthe conductive structure 110 also contacts an upper surface of a dummygate structure 106 b and/or a third MEOL structure 108 c. The conductivestructure 110 is arranged within an inter-level dielectric (ILD) layer212. In some embodiments, the ILD layer 212 may comprise more than onedielectric layer.

A third conductive contact 112 c and a fourth conductive contact 112 dare arranged within a first inter-metal dielectric (IMD) layer 214overlying the ILD layer 212. The third conductive contact 112 c and afourth conductive contact 112 d are configured to couple the second MEOLstructure 108 b to a third BEOL metal interconnect wire 114 c arrangedwithin a second IMD layer 216 overlying the first IMD layer 214. In someembodiments, the third BEOL metal interconnect wire 114 c may comprisecopper or a copper alloy. In some embodiments, the third and fourthconductive contacts, 112 c and 112 d, are arranged along an uppersurface of the second and third MEOL structures, 108 b and 108 c,respectively. In other embodiments, the third and fourth conductivecontacts, 112 c and 112 d, are arranged along an upper surface of theconductive structure 110. The third conductive contact 112 c isconfigured to provide current from the third BEOL metal interconnectwire 114 c to the second MEOL structure 108 b along a first conductivepath 118 a and the second conductive contact 112 b is configured toprovide current from the third BEOL metal interconnect wire 114 c to thesecond MEOL structure 108 b along a second conductive path 118 b that isparallel to the first conductive path 118 a.

Although FIG. 2A illustrates a cross-sectional view of an integratedcircuit 200 comprising MEOL structures 108 a-108 b having differentmaterials (shading) than the conductive structure 110, it will beappreciated that this is a non-limiting embodiment. For example, FIG. 2Billustrates some alternative embodiments of an integrated circuit 218having two different MEOL layers. A first MEOL layer 220 extendsvertically between the semiconductor substrate 102 and conductivecontacts 220 b-220 d, and includes the MEOL structures 108 a-108 c andthe conductive structure 110. A second MEOL layer 222 extends verticallybetween a top of the active gate structure 106 a and conductive contact220 a. In such embodiments, the conductive contacts 220 a-220 d have aheight h that is less than a height of conductive contacts 112 a-112 d,illustrated in FIG. 2A.

FIG. 3 illustrates some additional embodiments of an integrated circuit300 having a power horn structure configured to reduce parasiticresistance.

The integrated circuit 300 comprises a plurality of MEOL structures 108a-108 c extending over an active area 104 in a first direction 120 andinterleaved between a plurality of gate structures 106 a-106 b along asecond direction 122. In some embodiments, the active area 104 mayinclude at least one fin, protruding outward from a semiconductorsubstrate 102, to form FinFET transistors. The plurality of MEOLstructures comprise a first MEOL structure 108 a, a second MEOLstructure 108 b, and a third MEOL structure 108 c. In some embodiments,the plurality of MEOL structures 108 a-108 c may straddle opposing edgesof the active area 104 along the first direction 120. A conductivestructure 302 is arranged over the second and third MEOL structures, 108b and 108 c, at a location that is offset from the active area 104 inthe first direction 120. The conductive structure 302 is coupled to athird BEOL metal interconnect wire 114 c by way of a third conductivecontact 112 c, thereby providing a first conductive path 304 a betweenthe third BEOL metal interconnect wire 114 c and the second MEOLstructure 108 b. The conductive structure 302 is also coupled to thethird BEOL metal interconnect wire 114 c by way of a fourth conductivecontact 112 d, thereby providing for a second conductive path 304 bbetween the third BEOL metal interconnect wire 114 c and the second MEOLstructure 108 b.

FIG. 4 illustrates some additional embodiments of an integrated circuit400 having a power horn structure configured to reduce parasiticresistance.

The integrated circuit 400 comprises a plurality of MEOL structures 108a-108 c interleaved between a plurality of gate structures 106 a-106 balong a second direction 122. The plurality of MEOL structures comprisea first MEOL structure 108 a and a second MEOL structure 108 b arrangedover an active area 402, and a third MEOL structure 108 c arranged at alocation offset from the active area 402 along the second direction 122.In some embodiments, the active area 402 may include at least one fin,protruding outward from a semiconductor substrate 102, to form FinFETtransistors. A conductive structure 404 straddles an end of the activearea 402 and extends between the second MEOL structure 108 b and thethird MEOL structure 108 c. In some embodiments, the conductivestructure 404 extends over a dummy gate structure 106 b. The second MEOLstructure 108 b is coupled to a third BEOL metal interconnect wire 114 cby way of a third conductive contact 112 c, thereby providing a firstconductive path 406 a between the third BEOL metal interconnect wire 114c and the second MEOL structure 108 b. The third MEOL structure 108 c iscoupled to the third BEOL metal interconnect wire 114 c by way of afourth conductive contact 112 d, thereby providing a second conductivepath 406 b between the third BEOL metal interconnect wire 114 c and thesecond MEOL structure 108 b that extends through the conductivestructure 404.

FIG. 5 illustrates some additional embodiments of an integrated circuit500 having a power horn structure configured to reduce parasiticresistance.

The integrated circuit 500 comprises a plurality of MEOL structures 108a-108 b extending over an active area 502 in a first direction 120 andinterleaved between a plurality of gate structures 106 a-106 b along asecond direction 122. In some embodiments, the active area 502 mayinclude at least one fin, protruding outward from a semiconductorsubstrate 102, to form FinFET transistors. The plurality of MEOLstructures 108 a-108 b comprise a first MEOL structure 108 a and asecond MEOL structure 108 b. A conductive structure 504 is arranged overthe second MEOL structure 108 b at a location that is offset from theactive area 502 in the first direction 120. The active area 502 extendspast the conductive structure 504 in the second direction 122. Theconductive structure 504 is coupled to a third BEOL metal interconnectwire 114 c by way of a third conductive contact 112 c, thereby providinga first conductive path 506 a between the third BEOL metal interconnectwire 114 c and the second MEOL structure 108 b. The conductive structure504 is also coupled to the third BEOL metal interconnect wire 114 c byway of a fourth conductive contact 112 d, thereby providing for a secondconductive path 506 b between the third BEOL metal interconnect wire 114c and the second MEOL structure 108 b.

FIG. 6 illustrates some additional embodiments of an integrated circuit600 having a power horn structure configured to reduce parasiticresistance.

The integrated circuit 600 comprises a plurality of MEOL structures 108a-108 b interleaved between a plurality of gate structures 106 a-106 balong a second direction 122. The plurality of MEOL structures comprisea first MEOL structure 108 a and a second MEOL structure 108 b arrangedover an active area 602. In some embodiments, the active area 602 mayinclude at least one fin, protruding outward from a semiconductorsubstrate 102, to form FinFET transistors. A conductive structure 604 isarranged over the second MEOL structure 108 b at a location that isoffset from the active area 602 in a first direction 120. The conductivestructure 604 extends past the active area 602 in the second direction122. The conductive structure 604 is coupled to a third BEOL metalinterconnect wire 114 c by way of a third conductive contact 112 c,thereby providing a first conductive path 606 a between the third BEOLmetal interconnect wire 114 c and the second MEOL structure 108 b. Theconductive structure 604 is also coupled to the third BEOL metalinterconnect wire 114 c by way of a fourth conductive contact 112 d,thereby providing for a second conductive path 606 b between the thirdBEOL metal interconnect wire 114 c and the second MEOL structure 108 b.

FIG. 7A illustrates a top-view of some additional embodiments of anintegrated circuit 700 having a power horn structure configured toreduce parasitic resistance. FIG. 7B illustrates a cross-sectional view708 shown along cross-sectional line A-A′ of the integrated circuit 700of FIG. 7A.

As shown in FIG. 7A, the integrated circuit 700 comprises a plurality ofMEOL structures 108 a-108 d interleaved between a plurality of gatestructures 106 a-106 c along a second direction 122. The plurality ofMEOL structures comprise a first MEOL structure 108 a and a second MEOLstructure 108 b arranged over a first active area 702 a, a third MEOLstructure 108 c arranged at a location offset from the first active area702 a along the second direction 122, and a fourth MEOL structure 108 darranged over a second active area 702 b. In some embodiments, the firstactive area 702 a is included within a first well region 710 a and thesecond active area 702 b is included in a second well region 710 b. Insome embodiments, the first active area 702 a and/or the second activearea 702 b may include at least one fin, protruding outward from asemiconductor substrate 102, to form FinFET transistors. A conductivestructure 704 extends from over the first active area 702 a to over thesecond active area 702 b. The conductive structure 704 is arranged overthe second MEOL structure 108 b, the third MEOL structure 108 c, and thefourth MEOL structure 108 d.

In some embodiments, the conductive structure 704 extends over multipledummy gate structures, 106 b and 106 c. In some embodiments, the secondMEOL structure 108 b is coupled to a third BEOL metal interconnect wire114 c by way of a third conductive contact 112 c to provide a firstconductive path 706 a between the third BEOL metal interconnect wire 114c and the second MEOL structure 108 b, the third MEOL structure 108 c iscoupled to the third BEOL metal interconnect wire 114 c by way of afourth conductive contact 112 d to provide a second conductive path 706b between the third BEOL metal interconnect wire 114 c and the secondMEOL structure 108 b that extends through the conductive structure 704,and the fourth MEOL structure 108 d is coupled to the third BEOL metalinterconnect wire 114 c by way of a fifth conductive contact 112 e toprovide a third conductive path 706 c between the third BEOL metalinterconnect wire 114 c and the second MEOL structure 108 b that extendsthrough the conductive structure 704. In other embodiments, the thirdconductive contact 112 c, the fourth conductive contact 112 d, and thefifth conductive contact 112 e may be connected directly to theconductive structure 704.

FIGS. 8A-8C illustrates some embodiments of a NOR gate having a powerhorn structure configured to reduce parasitic resistance.

As shown in top-view 800, the NOR gate comprises a first active area 802a and a second active area 802 b. As shown in cross-sectional view 814of FIG. 8C (along line A-A′ of FIG. 8A), the first active area 802 acomprises a plurality of source/drain regions 816 a-816 d having n-typedoping. In some embodiments, the plurality of source/drain regions 816a-816 d may be arranged within a well region 818 having p-type doping.The second active area 802 b comprises a plurality of source/drainregions having p-type doping. In some embodiments, the first active area802 a and/or the second active area 802 b may include at least one fin,protruding outward from a semiconductor substrate 102, to form FinFETtransistors.

A first gate structure 804 a and a second gate structure 804 b extendover the first active area 802 a to form a first PMOS transistor T1 anda second PMOS transistor T2 arranged in series between a first powerrail 808 a (illustrated as transparent to show the underlying layers)held at a source voltage V_(DD) and an output pin ZN (as shown inschematic diagram 812 of FIG. 8B). The first gate structure 804 a andthe second gate structure 804 b are coupled to input pins A₁ and A₂configured to provide control signals to the first gate structure 804 aand the second gate structure 804 b, respectively. In some embodiments,the first power rail 808 a, the output pin ZN, and the input pins A₁ andA₂ are arranged on a same BEOL metal wire layer (e.g., an ‘M1’ layer).

A first plurality of MEOL structures 806 a-806 b are arranged over thefirst active area 802 a. The first plurality of MEOL structures comprisea first MEOL structure 806 a coupled to the output pin ZN by aconductive contact 810 (to simplify the illustration, a singleconductive contact 810 is labeled with a reference numeral in FIG. 8A).The first plurality of MEOL structures further comprise a second MEOLstructure 806 b and a third MEOL structure 806 c, which extend from overthe first active area 802 a to under the first power rail 808 a. Thesecond MEOL structure 806 b and the third MEOL structure 806 c arecoupled by a first conductive structure 812 a that provides for parallelcurrent paths between the first power rail 808 a and the second MEOLstructure 806 b.

The first gate structure 804 a and the second gate structure 804 b alsoextend over the second active area 802 b to form a first NMOS transistorT3 and a second NMOS transistor T4 arranged in parallel between theoutput pin ZN and a second power rail 808 b held at ground voltageV_(SS). A second plurality of MEOL structures 806 d-806 g are arrangedover the second active area 802 b. The second plurality of MEOLstructures comprise a fourth MEOL structure 806 d coupled to the outputpin ZN by a conductive contact 810. The second plurality of MEOLstructures further comprise a fifth MEOL structure 806 e, a sixth MEOLstructure 806 f, and a seventh MEOL structure 806 g, which extend fromover the second active area 802 b to under the second power rail 808 b.The sixth MEOL structure 806 f and the seventh MEOL structure 806 g arecoupled by a second conductive structure 812 b that provides forparallel current paths between the second power rail 808 b and the sixthMEOL structure 806 f.

FIG. 9 illustrates a top-view of some embodiments of an integratedcircuit 900 having a power horn structure and output pins configured toreduce parasitic capacitance.

The integrated circuit 900 comprises a plurality of input pins A₁-A₄.The plurality of input pins A₁-A₄ comprise wires on a metal interconnectlayer 902. The input pins A₁-A₄ are configured to provide an inputsignal (e.g., an input voltage) to a gate structure 904 device thatextends over an active area 906 of a transistor. The input signalcontrols operation of the gate structure 904 (i.e., controls a flow ofcharge carriers in the transistor devices). In some embodiments, theplurality of input pins A₁-A₄ may be arranged on a first metalinterconnect layer (i.e., a lowest metal interconnect layer above MEOLstructures 908). The integrated circuit 900 also comprises one or moreoutput pins ZN comprising wires on the metal interconnect layer 902. Theone or more output pins ZN are configured to provide an output signal(e.g., an output voltage) from a transistor device. In some embodiments,the one or more output pins ZN may be arranged on the first metalinterconnect layer.

The one or more output pins ZN have relatively short length L_(OP) whichreduces an overlap 910 between the input pins A₁-A₄ and the one or moreoutput pins ZN. Decreasing the overlap 910 between the one or moreoutput pins ZN and the input pins A₁-A₄ decreases a parasiticcapacitance of the integrated circuit 900. This is because the parasiticcapacitance between adjacent metal interconnect wires is proportional toan overlap of the wires and a distance between the wires (i.e., C=A·D;where C is capacitance, A is an area of overlap between wires, and D isa distance between the wires).

In some embodiments the one or more output pins ZN may have a lengthL_(OP) that is less than approximately 1.5 times the contact gate pitchC_(GP) (i.e., a distance between same edges of adjacent gate structures904). In some embodiments, a length L_(OP) of the one or more outputpins ZN is less than or equal to a length L_(IP) of the input pins A₁-A₄, thereby ensuring an overlap between the input pins A₁-A₄ and theone or more output pins ZN is on a single end of the output pins ZN. Insome additional embodiments, the one or more output pins ZN may have alength L_(OP) that is set by a minimum metal cut distance (i.e., adistance between cuts on a cut mask) in a self-align double patterningprocess.

In some embodiments, the one or more output pins ZN may be located alonga wiring track that is between an input pin A₁-A₄ and a power rail 912(e.g., held at a source voltage V_(DD) or a ground voltage V_(SS)). Insuch embodiments, the one or more output pins ZN may overlap an inputpin A₁-A₄ along one side but not both, thereby reducing a parasiticcapacitance between the one or more output pins ZN and the output pinsA₁-A₄.

FIGS. 10-17 illustrate some embodiments of a method of forming anintegrated circuit having a power horn structure.

As shown in cross-section view 1000, a semiconductor substrate 102 isprovided. The semiconductor substrate 102 may be any type ofsemiconductor body (e.g., silicon, SiGe, SOI) such as a semiconductorwafer and/or one or more die on a wafer, as well as any other type ofmetal layer, device, semiconductor and/or epitaxial layers, etc.,associated therewith. The semiconductor substrate 102 may comprise anintrinsically doped semiconductor substrate having a first doping type(e.g., an n-type doping or a p-type doping).

In some embodiments, a well region 202 may be formed within thesemiconductor substrate 102. The well region 202 may be formed byimplanting the semiconductor substrate 102 with a dopant species 1002having a second doping type that is opposite the first doping type ofthe semiconductor substrate 102 (e.g., a p-type substrate may beimplanted with an n-type dopant, or vice versa). In some embodiments,the well region 202 may be formed be implanting the dopant species 1002into the semiconductor substrate 102 according to a first masking layer1004 (e.g., a photoresist layer).

As shown in cross-sectional view 1100, a plurality of gate structures106 a-106 b are formed over the semiconductor substrate 102. Theplurality of gate structures my comprise an electrically active gatestructure 106 a arranged between a first source/drain region 204 a and asecond source/drain region 204 b, and a dummy gate structure 106 barranged between the second source/drain region 204 b and a thirdsource/drain region 204 c. The plurality of gate structures 106 a-106 bmay be formed by forming a gate dielectric layer 208 onto thesemiconductor substrate 102 and forming a gate electrode layer 210 overthe gate dielectric layer 208. The gate dielectric layer 208 and thegate electrode layer 210 are subsequently patterned according to aphotolithography process to form the plurality of gate structures, 106a-106 b.

Source/drain regions, 204 a-204 c, may be formed within thesemiconductor substrate 102 on opposing sides of the plurality of gatestructures 106 a-106 b. In some embodiments, the source/drain regions,204 a-204 c may be formed by an implantation process that selectivelyimplants the semiconductor substrate 102 with a dopant species 1102having the first doping type. The implantation process may use theplurality of gate structures 106 a-106 b and a second masking layer 1104to define the source/drain regions, 204 a-204 c. In some embodiments,the second masking layer 1104 may be the same as the first masking layer1004. The dopant species 1102 may be subsequently driven into thesemiconductor substrate 102 by a high temperature thermal anneal. Inother embodiments, the source/drain regions, 204 a-204 c, may be formedby etching the semiconductor substrate 102 and then performing anepitaxial process.

As shown in cross-sectional view 1200, a first ILD layer 1202 is formedover the semiconductor substrate 102. In various embodiments, the firstILD layer 1202 may comprise an oxide, an ultra-low k dielectricmaterial, or a low-k dielectric material (e.g., SiCO). The first ILDlayer 1202 may be formed by a deposition process (e.g., CVD, PE-CVD,ALD, PVD, etc.).

The first ILD layer 1202 is subsequently patterned to form one or moreopenings 1204. In some embodiment, the first ILD layer 1202 may bepatterned by forming a third masking layer 1206 over the first ILD layer1202, and subsequently exposing the first ILD layer 1202 to an etchant1208 in areas not covered by the third masking layer 1206. In someembodiments, the third masking layer 1206 may comprise a photoresistlayer having a pattern defined by a photolithography process. In variousembodiments, the etchant 1208 may comprise a dry etchant (e.g., a plasmaetch with tetrafluoromethane (CF₄), sulfur hexafluoride (SF₆), nitrogentrifluoride (NF₃), etc.) or a wet etchant (e.g., hydroflouric (HF)acid).

As shown in cross-sectional view 1300, a plurality of MEOL structures108 a-108 c are formed within the openings 1204 in the first ILD layer1202. The plurality of MEOL structures may comprise a first MEOLstructure 108 a arranged over a first source/drain region 204 a, asecond MEOL structure 108 b arranged over a second source/drain region204 b, and a third MEOL structure 108 c arranged over a thirdsource/drain region 204 c. The plurality of MEOL structures 108 a-108 cmay comprise a conductive material such as aluminum, copper, and/ortungsten, for example. The plurality of MEOL structures 108 a-108 c maybe formed by a deposition process and/or a plating process. In someembodiments, a deposition process may be used to form a seed layerwithin the one or more openings 1204, followed by a subsequent platingprocess (e.g., an electroplating process, an electro-less platingprocess) that forms a metal material to a thickness that fills the oneor more openings 1204. In some embodiments, a chemical mechanicalpolishing (CMP) process may be used to remove excess of the metalmaterial from a top surface of the first ILD layer 1202.

As shown in cross-sectional view 1400, a conductive structure 110 isformed within a second ILD layer 1402 arranged over the first ILD layer1202. The conductive structure 110 is arranged over the second MEOLstructure 108 b and the third MEOL structure 108 c. The conductivestructure 110 has a lower surface that contacts an upper surface of thesecond MEOL structure 108 b. In some embodiments, the lower surface ofthe conductive structure 110 also contacts an upper surface of a dummygate structure 106 b and/or the third MEOL structure 108 c. In someembodiments, the conductive structure 110 is formed by etching thesecond ILD layer 1402 to form an opening and subsequently forming aconductive material within the opening.

As shown in cross-sectional view 1500, a plurality of conductivecontacts 112 a-112 d are formed in a first IMD layer 214. The pluralityof conductive contacts 112 a-112 d may be formed by etching the firstIMD layer 214 to form a plurality of openings. A conductive material(e.g., tungsten) is then formed within the plurality of openings.

As shown in cross-sectional view 1600 and top-view 1604, a BEOL metalinterconnect layer is formed over the plurality of conductive contacts112 a-112 d. The BEOL metal interconnect layer comprises an input pin1602 a coupled to the active gate structure 106 a by a first conductivecontact 112 a, an output pin 1602 b coupled to the first MEOL structure108 a by a second conductive contact 112 b, and a power rails 1602 celectrically coupled to the second MEOL structure 108 b by a thirdconductive contact 112 c and a fourth conductive contact 112 d. In someembodiments, the third and fourth conductive contacts, 112 c and 112 d,are arranged along an upper surface of the second and third MEOLstructures, 108 b and 108 c, respectively. In other embodiments, thethird and fourth conductive contacts, 112 c and 112 d, are arrangedalong an upper surface of the conductive structure 110.

As shown in top-view 1700, the input pin 1602 a and/or the output pins,1602 b and 1602 d, are selectively cut to reduce a length of the inputpin 1602 a and/or the output pins, 1602 b and 1602 d. For example, asshown in top-view 1700, a length of output pin 1602 b is reduced fromL_(OP)′ to L_(OP). In some embodiments, a cut mask may be used to reducea length of the input pin 1602 a and the output pins, 1602 b and 1602 d.The cut mask has a plurality of cut regions 1704, which ‘cut’ the inputpin 1602 a and the output pins, 1602 b and 1602 d, by removing metalmaterial from selective areas of a metal layer comprising the input pin1602 a and the output pins, 1602 b and 1602 d.

In some additional embodiments, the cut regions 1704 are separated by aminimum metal cut distance, so that the output pin 1702 d has a lengthL_(OP) that is set by the minimum metal cut distance. For example, insome embodiments the output pin 1702 d may have a length L_(OP) that isless than approximately 1.5 times the contact gate pitch C_(OP) (i.e., adistance between same edges of adjacent gate structures 904). In someadditional embodiments, a length L_(OP) of the output pin 1702 d is lessthan or equal to a length L_(IP) of the input pin 1702 a, therebyensuring an overlap between the input pin 1702 a and the output pin 1702d is on a single end of the output pin 1702 d.

FIG. 18 illustrates a flow diagram of some embodiments of a method 1800of forming an integrated circuit having a power horn structureconfigured to reduce parasitic resistance.

While the disclosed method 1800 is illustrated and described herein as aseries of acts or events, it will be appreciated that the illustratedordering of such acts or events are not to be interpreted in a limitingsense. For example, some acts may occur in different orders and/orconcurrently with other acts or events apart from those illustratedand/or described herein. In addition, not all illustrated acts may berequired to implement one or more aspects or embodiments of thedescription herein. Further, one or more of the acts depicted herein maybe carried out in one or more separate acts and/or phases.

At 1802, a first gate structure is formed over a semiconductorsubstrate. In some embodiments, the first gate structure may compriseone of a plurality of gate structures are formed over a semiconductorsubstrate at a substantially regular pitch. FIG. 11 illustrates someembodiments corresponding to act 1802.

At 1804, an active area is formed. The active area comprises a firstsource/drain region and a second source/drain region formed on opposingsides of a first one of the plurality of gate structures. In someembodiments, the active area may include at least one fin, protrudingoutward from the semiconductor substrate, to form FinFET transistors.FIGS. 10-11 illustrate some embodiments corresponding to act 1804.

At 1806, first and second MEOL structures are formed over the first andsecond source/drain regions, respectively. FIGS. 12-13 illustrate someembodiments corresponding to act 1806.

At 1808, a conductive structure is formed over the second MEOLstructure. FIG. 14 illustrates some embodiments corresponding to act1808.

At 1810, a plurality of conductive contacts are formed over the MEOLstructures and the plurality of gate structures. FIG. 15 illustratessome embodiments corresponding to act 1810.

At 1812, a metal interconnect layer is formed. The metal interconnectwire layer comprises a first metal wire coupled to the first gatestructure by a conductive contact, a second metal wire coupled to thefirst source/drain region by a conductive contact, and a third metalwire electrically coupled to the second MEOL structure by two or moreconductive contacts. FIG. 16A-16B illustrates some embodimentscorresponding to act 1812.

At 1814, one or more of the first or second metal wires are cut toreduce lengths of the one or more of the first or second metal wires.FIG. 17 illustrates some embodiments corresponding to act 1814.

Therefore, the present disclosure relates to an integrated circuithaving parallel conductive paths between a BEOL interconnect layer and aMEOL structure, which are configured to reduce a parasitic resistanceand/or capacitance of an integrated circuit.

In some embodiments, the present disclosure relates to an integratedcircuit. The integrated circuit comprises a first source/drain regionand a second source/drain region arranged within a semiconductorsubstrate and separated by a channel region. A gate structure isarranged over the channel region, and a middle-end-of-the-line (MEOL)structure arranged over the second source/drain region. A conductivestructure is arranged over and in electrical contact with the MEOLstructure. A first conductive contact is vertically arranged between theMEOL structure and a back-end-the-line (BEOL) interconnect wire, and asecond conductive contact configured to electrically couple the BEOLinterconnect wire and the MEOL structure along a conductive pathextending through the conductive structure.

In other embodiments, the present disclosure relates to an integratedcircuit. The integrated circuit comprises a first gate structureextending over an active area in a first direction. The active areacomprises a first source/drain region and a second source/drain regiondisposed within a semiconductor substrate. A first MEOL structure and asecond MEOL structure are arranged on opposite sides of the first gatestructure. The first MEOL structure extends over the first source/drainregion and the second MEOL structure extends over the secondsource/drain region in the first direction. A conductive structure isarranged over and in electrical contact with the second MEOL structure.A first conductive contact is arranged over the second MEOL structureand below a metal power rail extending in a second directionperpendicular to the first direction. A second conductive contactconfigured to electrically couple the metal power rail and the secondMEOL structure along a conductive path extending through the conductivestructure.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

In yet other embodiments, the present disclosure relates to a method offorming an integrated circuit. The method comprises forming a first gatestructure over a semiconductor substrate. The method further comprisesforming a first source/drain region and a second source/drain region onopposing sides of the first gate structure. The method further comprisesforming a first MEOL structure onto the first source/drain region and asecond MEOL structure onto the second source/drain region. The methodfurther comprises forming a conductive structure on and in directcontact with the second MEOL structure. The method further comprisesforming a BEOL metal interconnect wire coupled to the second MEOLstructure by a first conductive path extending through a firstconductive contact arranged over the second MEOL structure and by asecond conductive path extending through the conductive structure.

1. An integrated circuit, comprising: a first source/drain region and asecond source/drain region arranged within a semiconductor substrate andseparated by a channel region; a gate structure arranged over thechannel region; a middle-end-of-the-line (MEOL) structure arranged overthe second source/drain region; a conductive structure arranged over andin electrical contact with the MEOL structure; a first conductivecontact vertically arranged between the MEOL structure and aback-end-the-line (BEOL) interconnect wire; and a second conductivecontact configured to electrically couple the BEOL interconnect wire andthe MEOL structure along a conductive path extending through theconductive structure.
 2. The integrated circuit of claim 1, wherein theMEOL structure extends in a first direction and the BEOL interconnectwire and the conductive structure extend in a second direction that isperpendicular to the first direction.
 3. The integrated circuit of claim1, wherein the second conductive contact is in direct contact with anupper surface of the conductive structure and with a lower surface ofthe BEOL interconnect wire.
 4. The integrated circuit of claim 1,further comprising: a second MEOL structure laterally separated from theMEOL structure by a dummy gate structure.
 5. The integrated circuit ofclaim 4, wherein the conductive structure extends over the dummy gatestructure and is in electrical contact with the second MEOL structure.6. (canceled)
 7. The integrated circuit of claim 1, wherein the MEOLstructure is arranged on and in direct contact with the semiconductorsubstrate.
 8. The integrated circuit of claim 1, wherein the conductivestructure is arranged below the first conductive contact and the secondconductive contact.
 9. The integrated circuit of claim 1, wherein theMEOL structure straddles opposing edges of the second source/drainregion.
 10. An integrated circuit, comprising: a first gate structureextending over an active area in a first direction, wherein the activearea comprises a first source/drain region and a second source/drainregion disposed within a semiconductor substrate; a first MEOL structureand a second MEOL structure arranged on opposite sides of the first gatestructure, wherein the first MEOL structure extends over the firstsource/drain region and the second MEOL structure extends over thesecond source/drain region in the first direction; and a conductivestructure arranged over and in electrical contact with the second MEOLstructure; a first conductive contact arranged over the second MEOLstructure and below a metal power rail extending in a second directionperpendicular to the first direction; and a second conductive contactconfigured to electrically couple the metal power rail and the secondMEOL structure along a conductive path extending through the conductivestructure.
 11. The integrated circuit of claim 10, further comprising:an input pin located on a BEOL metal wire layer comprising the metalpower rail, wherein the input pin is coupled to the first gate structureby a third conductive contact; and an output pin located on the BEOLmetal wire layer and coupled to the first MEOL structure by a fourthconductive contact.
 12. The integrated circuit of claim 11, wherein theoutput pin has a length that is less than approximately 1.5 times apitch of the first gate structure and a second gate structure arrangedover the active area.
 13. The integrated circuit of claim 11, whereinthe output pin has a length that is less than or equal to a length ofthe input pin.
 14. The integrated circuit of claim 10, wherein theconductive structure is arranged vertically over the second MEOLstructure, and vertically below the first conductive contact and thesecond conductive contact.
 15. The integrated circuit of claim 10,wherein the second conductive contact is in direct contact with an uppersurface of the conductive structure and with a lower surface of themetal power rail. 16-20. (canceled)
 21. An integrated circuit,comprising: a gate structure arranged over an active area comprising asource region and a drain region disposed within a semiconductorsubstrate; a middle-end-of-the-line (MEOL) structure laterally extendingover the source region in a first direction and vertically disposedbetween the semiconductor substrate and a plane extending along an uppersurface of the gate structure; a dummy gate structure laterallyseparated from the gate structure by the MEOL structure along a seconddirection perpendicular to the first direction; a conductive structurecontacting an upper surface of the MEOL structure and extending to alocation over the dummy gate structure; a first conductive contactarranged vertically between the MEOL structure and a metal interconnectwire; and a second conductive contact configured to electrically couplethe metal interconnect wire and the MEOL structure along a conductivepath extending through the conductive structure.
 22. The integratedcircuit of claim 21, further comprising: a second MEOL structurelaterally separated from the MEOL structure by the dummy gate structure,wherein the conductive structure directly contacts an upper surface ofthe second MEOL structure.
 23. The integrated circuit of claim 21,wherein the conductive structure directly contacts an upper surface ofthe MEOL structure.
 24. The integrated circuit of claim 21, wherein theconductive structure directly contacts an upper surface of the dummygate structure.
 25. The integrated circuit of claim 21, wherein theconductive structure is disposed below an upper surface of a thirdconductive contact arranged directly between the gate structure and asecond metal interconnect wire.
 26. The integrated circuit of claim 21,wherein the first conductive contact and the second conductive contactcomprise tungsten.